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| 2SK2688-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 30V 0,017 50A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 50 200 16 520 60 150 -55 ~ +150 L=0.277mH,Vcc=12V > Equivalent Circuit Unit V A A V mJ W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=50A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 30 1,0 Typ. 1,5 10 0,2 10 0,012 0,0075 45 2750 1300 600 13 180 55 150 1,14 85 0,17 Max. 2,0 500 1,0 100 0,017 0,01 4130 1950 900 20 270 83 230 1,71 130 22 50 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min. Typ. Max. 2,08 125,0 Unit C/W C/W N-channel MOS-FET 30V 0,017 50A 2SK2688-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=25A; VGS=10V 60W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test;TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg): ID=50A; Tch=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25oC C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Avalanche Energy Derating E(AV)=f(starting Tch): Vcc=12V; IAV<=50A Safe operation area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T Eas [mJ] 10 ID [A] 12 Starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 30V 0,017 50A 2SK2688-01 FAP-IIS Series Typical Switching Characteristics 60W > Characteristics t [ns] VSD [V] Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 0 0 0 TC [C] 0 0 0 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 80 60 40 20 0 0 0 0 0 0 0 0 This specification is subject to change without notice! |
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